• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer rinsing method, which improves the yield of a device by using an overflow flow rinse bath equipped with a bubbler to effectively remove residues caused by the use of a cleaning liquid. To a method of rinsing wafers.
    公开号:KR19980054453A
    申请号:KR1019960073616
    申请日:1996-12-27
    公开日:1998-09-25
    发明作者:이주영；김학묵；김우진
    申请人:김영환；현대전자산업 주식회사；
    IPC主号:
    专利说明:

    Wafer Rinsing Method
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer rinsing method, and more particularly to a wafer rinsing method capable of effectively removing residues resulting from the use of a high viscosity cleaning liquid.
    In general, a semiconductor device is manufactured through several steps, and before and after each step, a cleaning and a rinse process are performed to maintain cleanliness of the wafer surface. The cleaning process is carried out using a cleaning solution containing H 2 O 2 or a cleaning solution such as H 2 SO 4 , H 3 PO 4 and the like. The rinsing process is performed in a Quick Dump Rinse (QDR) method using DI water. Then, the conventional wafer rinsing method will be described.
    Conventionally, after the cleaning process is completed, the wafer is immersed in a QDR rinsing tank consisting of a supply valve, an N 2 bubbler, a DI water shower (Shower), and the like, and continuously supplying the DI water to overflow the rinsing tank into the rinsing tank. Supply N 2 gas. Then, after performing a dump drain and a DI water shower, the surface of the wafer is continuously rinsed with DI water overflowed. By the way, such a process is long because one cycle of the process is long and the same cycle should be repeated about 6 to 10 times the process time is long. In addition, since the size of the rinsing tank must be increased according to the trend of large diameter of the wafer, the amount of rinsing liquid is also increased.
    Therefore, the present invention solves the above disadvantages by overflowing the rinsing liquid supplied with the active gas in the form of a bubble and performing the second rinsing with the overflow of the rinsing liquid supplied with the inert gas in the form of a bubble. It is an object of the present invention to provide a method of rinsing wafers.
    According to the present invention for achieving the above object, in the wafer rinsing method of cleaning is completed, the rinse liquid in which the inert gas is supplied in a bubble form after the first rinsing and overflowing the rinse liquid supplied with the active gas in the form of bubbles The secondary rinse is performed while overflowing, wherein the active gas is oxygen and the inert gas is any one of argon and nitrogen. In addition, the temperature of the rinsing liquid supplied during the first rinsing process is 80 to 100 ℃, the temperature of the rinsing liquid supplied during the second rinsing process is 0 to 100 ℃, the rinsing liquid is DI water do.
    1 is a structural diagram of a cleaning tank used for cleaning a wafer.
    2 is a structural diagram of a rinsing tank for explaining a wafer rinsing method according to the present invention.
    * Description of the symbols for the main parts of the drawings *
    1: washing tank 2: washing liquid supply pipe
    3: rinse tank 4: bubbler
    5: gas supply line 6: rinse liquid supply line
    Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.
    First, as shown in FIG. 1, a wafer having a predetermined process is completed through a cleaning solution supply pipe 2, and a cleaning tank including a cleaning solution containing H 2 O 2 or a cleaning solution such as H 2 SO 4 , H 3 PO 4, etc. After positioning in 1), cleaning process is performed. As shown in FIG. 2, the wafer is transferred into the rinsing tank 3 in which a gas supply port 5 and a rinsing liquid supply pipe 6 are installed at a lower portion thereof, and a bubbler 4 is installed at an inner bottom thereof. Then, DI water having a temperature of 80 to 100 ° C. is supplied through the rinsing liquid supply pipe 6 so that the rinsing tank 3 overflows, and 2 to 2 active gases such as oxygen (O 2 ) are supplied through the gas supply pipe 5. Carry out the first rinse process with 4 minutes of supply. Thereafter, DI water at a temperature of 0 to 100 ° C. is supplied through the rinsing liquid supply pipe 6 so that the rinsing tank 3 overflows, and argon (Ar) or nitrogen (N 2 ) is supplied through the gas supply pipe 5. A second rinse process is carried out with an inert gas for 2 to 5 minutes.
    When the rinsing process is performed as described above, residual ions such as sulfur (S), phosphorus (P), and chlorine (C1) remaining due to the use of the cleaning liquid are effectively removed by the active gas bubbles contained in the high temperature DI water. The inert gas bubble is then deposited on the wafer to completely remove the remaining particles.
    As described above, according to the present invention, the cleaning process is performed by overflowing the rinsing liquid supplied with the active gas in the form of a bubble and performing the second rinsing with the overflow of the rinsing liquid supplied with the inert gas in the form of a bubble. Complete removal of residual residues is possible and the cleanliness of the wafer surface improves the yield of the device. In addition, in the case of using the present invention, the step of the process is simpler than the conventional method, and since no additional equipment is required, the progress time of the process is reduced and cost reduction can be achieved.
    权利要求:
    Claims (5)
    [1" claim-type="Currently amended] In the wafer rinsing method of cleaning is completed,
    A rinsing method according to claim 1, wherein the first rinsing is performed while the active gas overflows the rinse liquid supplied in the form of bubbles, and the second rinsing is performed while the rinse liquid in which the inert gas is supplied in the form of bubbles is overflowed.
    [2" claim-type="Currently amended] The method of claim 1,
    And wherein the active gas is oxygen and the inert gas is any one of argon and nitrogen.
    [3" claim-type="Currently amended] The method of claim 1,
    Wafer rinsing method characterized in that the temperature of the rinsing liquid supplied during the first rinsing process is 80 to 100 ℃.
    [4" claim-type="Currently amended] The method of claim 1,
    Wafer rinsing method characterized in that the temperature of the rinsing liquid supplied during the second rinsing process is 0 to 100 ℃.
    [5" claim-type="Currently amended] The method according to claim 1, 3 or 4,
    Wafer rinsing method characterized in that the rinse liquid is DI water.
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1996-12-27|Application filed by 김영환, 현대전자산업 주식회사
    1996-12-27|Priority to KR1019960073616A
    1998-09-25|Publication of KR19980054453A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019960073616A|KR19980054453A|1996-12-27|1996-12-27|Wafer Rinsing Method|
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